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    "headline": "The Avalanche Stays in Silicon",
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    "dek": "A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.",
    "summary": "A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.",
    "body_text": "Separating germanium absorption from silicon multiplication limits high fields at the heterointerface. The best tested geometry reached a gain-bandwidth product of 27.07 gigahertz at matched bias. The work is a submitted device study, not a production component announcement.",
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      "title": "arXiv preprint 2610.37593, original v1",
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