research
Silicon Reads Mid-Infrared Light Through an Optical Gate
A nanoparticle-metasurface device reports room-temperature, zero-bias detection at 6.8 micrometers without extending silicon's direct absorption band.
Summary
A nanoparticle-metasurface device reports room-temperature, zero-bias detection at 6.8 micrometers without extending silicon's direct absorption band.
Instead of asking a mid-infrared photon to create carriers directly in silicon, the device lets it alter a prepared neodymium optical state and converts that change through a silicon Schottky junction. The reported modulation responsivity is 103 microamps per watt at 6.8 micrometers, with three distinguishable combined-input states. This is a laboratory device demonstration, not a production sensor.
Why it matters
A nanoparticle-metasurface device reports room-temperature, zero-bias detection at 6.8 micrometers without extending silicon's direct absorption band.
Limits and context
- This is a laboratory device demonstration, not a production sensor.
Key claims
A nanoparticle-metasurface device reports room-temperature, zero-bias detection at 6.8 micrometers without extending silicon's direct absorption band.
Qualification: This is a laboratory device demonstration, not a production sensor.
Evidence: source-2026-10-28-018
Sources
- arXiv preprint 2610.36475, original v1arXiv · primary research
Corrections
No corrections have been recorded for this story.