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A Hall-Density Collapse Marks the Transistor Threshold
Measurements on monolayer MoS2 devices identify classical percolation, driven by dielectric-interface disorder, as the conduction-onset mechanism.
Summary
Measurements on monolayer MoS2 devices identify classical percolation, driven by dielectric-interface disorder, as the conduction-onset mechanism.
A temperature-independent Hall-density collapse and vanishing activation energy converge on one critical carrier density. Extracted barriers exceed room-temperature thermal energies, keeping interface disorder relevant beyond cryogenic operation.
Why it matters
Measurements on monolayer MoS2 devices identify classical percolation, driven by dielectric-interface disorder, as the conduction-onset mechanism.
Limits and context
No additional limitation was separately recorded.
Key claims
Measurements on monolayer MoS2 devices identify classical percolation, driven by dielectric-interface disorder, as the conduction-onset mechanism.
Evidence: source-2026-11-05-018
Sources
- arXiv preprint 2611.06815, original v1arXiv · primary research
Corrections
No corrections have been recorded for this story.