research
The Avalanche Stays in Silicon
A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.
Summary
A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.
Separating germanium absorption from silicon multiplication limits high fields at the heterointerface. The best tested geometry reached a gain-bandwidth product of 27.07 gigahertz at matched bias. The work is a submitted device study, not a production component announcement.
Why it matters
A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.
Limits and context
- The work is a submitted device study, not a production component announcement.
Key claims
A laterally engineered germanium-on-silicon photodiode reached 11.81 amperes per watt and a 7.13-gigahertz bandwidth in the reported device.
Qualification: The work is a submitted device study, not a production component announcement.
Evidence: source-2026-10-29-019
Sources
- arXiv preprint 2610.37593, original v1arXiv · primary research
Corrections
No corrections have been recorded for this story.